N-Tetratetracontane

• CAS: 7098-22-8
• Catalog Number: ACM7098228-1
• Category: Main Products
• Molecular Weight: 619.2
• Molecular Formula: C44H90
• Synonyms: ALKANE C44;N-TETRATETRACONTANE;TETRATETRACONTANE;TETRATETRACONTANE, STANDARD FOR GC;N-TETRATETRACONTANE, 500MG, NEAT;Tetratetracontane,96%;n-Tetratetracontane,96%;TETRATETRACONTANE 96%
• IUPAC Name: tetratetracontane
• Canonical SMILES: CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC
• InChI Key: KMXFZRSJMDYPPG-UHFFFAOYSA-N
• Boiling Point: 547.6ºC at 760 mmHg
• Melting Point: 85-87°C(lit.)
• Flash Point: 448.2ºC
• Density: 0.82g/cm³
• Appearance: light yellow powder
• Complexity: 411
• Defined Atom Stereocenter Count: 0
• EC Number: 230-407-0
• Exact Mass: 618.7042
• Formal Charge: 0
• Heavy Atom Count: 44
• Hydrogen Bond Acceptor Count: 0
• Hydrogen Bond Donor Count: 0
• Isotope Atom Count: 0
• Monoisotopic Mass: 618.7042
• Rotatable Bond Count: 41
• Topological Polar Surface Area: 0 Ų
• WGK Germany: 3
• XLogP3-AA: 23.4

Case Study

Enhancing Ferroelectric OFET Performance via Surface Engineering: The Application of N-Tetratetracontane in Flexible Nonvolatile Memory Devices

Xu M, et al. Organic Electronics, 2019, 64, 62-70.

N-Tetratetracontane (TTC), a long-chain alkane, was applied as a passivation layer to optimize the semiconductor/dielectric interface in flexible ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM) devices. The TTC layer was thermally deposited onto spin-coated P(VDF-TrFE-CTFE) ferroelectric terpolymer films at a rate of 0.5-1 Å/s, with deposition thickness precisely monitored using a quartz crystal oscillator. Post-deposition annealing at 75 °C for 2 hours was employed to smooth the TTC layer. This treatment significantly influenced the growth behavior of the overlying pentacene semiconductor, inducing a layer-by-layer growth mode that yielded enlarged crystalline grains and improved interfacial morphology. Subsequently, a 40 nm thick pentacene layer was thermally evaporated onto the dielectric surfaces, followed by sequential thermal deposition of Cu (60 nm)/MoO₃ (5 nm) to define source and drain electrodes. Devices fabricated on PEN substrates exhibited enhanced mobility (~0.5 cm² V⁻¹ s⁻¹), low programming/erasing voltage (±15 V), and stable electrical performance under mechanical bending. This study demonstrates the critical role of TTC in modulating interfacial properties to achieve high-performance, low-voltage, and mechanically durable flexible Fe-OFET NVMs.

Modifying Surface States via Molecular Adsorption: Application of n-Tetratetracontane on Au(111) for Shockley State Engineering

Kanai K, et al. Thin Solid Films, 2009, 517(11), 3276-3280.

The adsorption behavior and electronic influence of n-Tetratetracontane (n-C₄₄H₉₀, TTC) on Au(111) surfaces was systematically studied using angle-resolved ultraviolet photoemission spectroscopy (ARUPS). A single molecular layer of TTC was deposited via resistance heating of high-purity TTC contained in a quartz crucible under ultrahigh vacuum (< 2 × 10⁻⁹ Pa). The Au(111) substrate was cleaned through repeated Ar⁺ sputtering (1 keV) and annealing cycles at ~600 °C until the Shockley surface state peak was distinctly observed in the ARUPS spectrum.
Using a He I resonance line (hν = 21.218 eV) as the excitation source, spectra were acquired with a hemispherical energy analyzer (Omicron EA-125 HR) offering ~70 meV resolution. The TTC monolayer, adopting a flat-on configuration, induced a measurable energy shift (~160 meV) of the Shockley surface state toward the Fermi level, indicating significant modulation of the quasi-two-dimensional surface electron system.This study demonstrates TTC's utility in tuning metallic surface electronic structures through non-covalent molecular adsorption, offering valuable insight for molecular electronics and organic-metal interface engineering.