4219-49-2 Purity
96%
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Specification
Dadgaryeganeh, Reza, et al. Chemical Science 16.8 (2025): 3680-3692.
Vat dyes such as Vat Orange 3 (VO3) are inexpensive, widely available, and possess extended π-conjugation - attractive starting points for high-value organic materials. A synthetic route was developed to first functionalize VO3 with bromoaryl units, followed by the key step of incorporating phosphorus via reaction with PhPCl2. This yielded two new target compounds as mixtures of cis- and trans- isomers. This methodology successfully converted the flat, planar dye into a twisted, phosphorus-modified nanocarbon structure. The chemistry delivers a versatile platform for sensor materials, responsive thin films and as a precursor family for engineered 2D organic nanocarbons.
Synthetic Routes:
VO3 → intermediate S1 (improved solubility) in 85% yield to break strong stacking. Install 2-bromoaryl groups via Miyaura borylation sequence to access S3 (76% yield) and S4 (58% yield). Introduce phosphoryl groups by metal-halogen exchange (n-BuLi) then PhPCl2, followed by controlled hydrolysis and Michaelis-Arbuzov rearrangement to give intermediates S5/S6. Final cyclization/oxidation (AgNO3-catalysed) produced two target families (termed 1-O and 2-O), isolated as separable cis/trans isomers in overall yields of 25% and 19%, respectively.
A subsequent step reduces P=O to trivalent phosphorus (using trichlorosilane under microwave heating at 150 °C), giving P(III) species (compounds 1 and 2) as isomeric mixtures (31P ~ -27 to -26 ppm); these are air-sensitive and handled/purified under inert atmosphere.
Kahraman, Bilge, et al. Journal of Materials Chemistry C 12.11 (2024): 3838-3853.
Purified Vat Orange 3 (VO3) was evaluated as the active semiconductor layer in OFETs with a staggered bottom-gate, top-contact architecture. Thin films (~80 nm) were deposited via vacuum sublimation (at ~225-235°C) onto a dielectric stack.
Key Findings:
· Clear n-Type Semiconductor Behavior: VO3 functions as an n-type organic semiconductor in OFETs. Electrochemical data indicate a deep LUMO (below -4.0 eV), which explains the need to measure devices in an inert atmosphere (ambient injection/measurement compromised).
· Exceptional Material Stability: Measured field-effect mobilities were modest relative to state-of-the-art organic semiconductors. However, purified VO3 demonstrated very good stability against degradation when stored in air. OFETs fabricated with material stored for several years showed reproducible results, highlighting its robustness. VO3 sublimes reproducibly at ~225-235 °C under vacuum and shows good thermal handling for vacuum deposition.
· Chemical Handle for Tuning: VO3 has reactive bromine sites that allow relatively facile routes to chemical modification (cross-coupling, etc.) to tune the electronic structure, as well as polymerize/ create networks.
· Limitations for Hole Transport: Devices are n-type current, not p-type, even with Au contacts; deep HOMO/LUMO energetics imply that different contact metals (with different work functions) or chemical doping may be necessary to access hole transport.
The molecular formula of Vat Orange 3 is C22H8Br2O2.
Vat Orange 3 was created on 2005-08-08 and modified on 2023-12-23.
The IUPAC name of Vat Orange 3 is 9,18-dibromohexacyclo[11.7.1.1 4,20 .0 2,11 .0 3,8 .0 17,21 ]docosa-1(21),2,4,6,8,10,13,15,17,19-decaene-12,22-dione.
The InChI of Vat Orange 3 is InChI=1S/C22H8Br2O2/c23-15-7-14-19-17-9(15)3-1-5-11(17)21(25)13-8-16(24)10-4-2-6-12(22(14)26)18(10)20(13)19/h1-8H.
The Canonical SMILES of Vat Orange 3 is C1=CC2=C(C=C3C4=C2C(=C1)C(=O)C5=CC(=C6C=CC=C(C6=C54)C3=O)Br)Br.
The molecular weight of Vat Orange 3 is 464.1 g/mol.
The XLogP3-AA value of Vat Orange 3 is 6.5.
Vat Orange 3 has 0 hydrogen bond donor counts.
The topological polar surface area of Vat Orange 3 is 34.1 Ų.
Vat Orange 3 has 26 heavy atom counts.
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