Afouxenidis D1, Mazzocco R2, Vourlias G3, Livesley PJ2, Krier A2, Milne WI4,5, Kolosov O2, Adamopoulos G1.
ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7334-41. doi: 10.1021/acsami.5b00561. Epub 2015 Mar 24.The replacement of SiO2 gate dielectrics with metal oxides of higher dielectric constant has led to the investigation of a wide range of materials with superior properties compared with SiO2. Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. To overcome this bottleneck, research has focused on the development of alternative deposition methods based on solution-processable metal oxides. Read More