Indium tin oxide

• CAS: 50926-11-9
• Catalog Number: ACM50926119-14
• Category: Main Products
• Molecular Weight: 428.34
• Molecular Formula: In2O5Sn
• Synonyms: Indium stannic oxide
• SMILES: O=[SnH2].O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O
• InChI: 1S/2In.5O.Sn,LNNWKAUHKIHCKO-UHFFFAOYSA-N
• InChI Key: LNNWKAUHKIHCKO-UHFFFAOYSA-N
• Boiling Point: 82 °C
• Melting Point: 287 °C
• Flash Point: 57.2 °F
• Density: 1.2 g/mL at 25 °C (lit.)
• Solubility: Insoluble in water
• Appearance: Yellow-green nanopowder
• Storage: -20 °C
• Assay: 99.99% trace metals basis
• Chemical Formula: In2O3: SnO2
• Color/Form: yellowish green
• Form: solid
• MDL Number: MFCD00171662
• Packaging: 1 ea in rigid mailer
• Quality Level: 100

Case Study

Indium Tin Oxide: An Engineerable Platform for Organic Electronic Interfaces

Hotchkiss, Peter J., et al. Accounts of chemical research 45.3 (2012): 337-346.

Optimizing the interface between transparent electrodes and organic semiconducting layers is a fundamental challenge in developing efficient organic light-emitting diodes (OLEDs) and organic photovoltaics (OPVs). The surface properties of common electrodes, such as indium tin oxide (ITO), often require precise modification to ensure compatible surface energy and work function for effective charge injection or extraction.
In this application, ITO's metal oxide surface is functionalized with phosphonic acids (PAs) to form stable, ordered monolayers. The ITO substrate provides the necessary surface hydroxyl groups for strong, predominantly bidentate binding of the phosphonic acid anchor. By modifying the functional "R-group" of the PA molecule, researchers can independently tune the surface energy and electronic work function of the ITO without altering its bulk transparency or conductivity.
Key Performance:
Robust and Tunable Surface Modification: Phosphonic acids form stable monolayers on ITO, allowing the surface work function to be tuned by over 1 electronvolt (eV). This enables precise matching with the energy levels of overlying organic materials.
Enhanced Device Compatibility and Stability: PA-modified ITO surfaces exhibit improved environmental stability and create a more compatible interface for subsequent deposition of organic active layers.
Improved Device Performance: The engineered interface reduces energy barriers for hole injection in OLEDs and hole-harvesting in OPVs, leading to marked improvements in overall device efficiency and performance.

Temperature-Controlled Sputter Deposition Improves ITO Film Transparency and Conductivity

Her, Shiuh-Chuan, et al. Journal of Applied Biomaterials & Functional Materials 15.2 (2017): 170-175.

The performance of indium tin oxide (ITO), the industry-standard transparent conductive oxide, is highly dependent on its deposition conditions. This study highlights how precise control of Indium Tin Oxide film deposition temperature is a critical process parameter for optimizing its key functional properties for advanced applications.
In this investigation, ITO thin films were deposited onto glass substrates using DC magnetron sputtering across a temperature range from room temperature (25°C) to 275°C. The study aimed to systematically understand how the substrate temperature during deposition influences the film's microstructure, and consequently, its electrical and optical performance, which are paramount for its effectiveness as a transparent electrode.
Key Performance:
Modified Surface Morphology: Atomic force microscopy revealed that increased deposition temperature altered the film microstructure, resulting in larger, more defined grains and an increase in surface roughness (from 0.331 nm to 1.440 nm RMS), characteristics associated with higher-quality polycrystalline growth.
Enhanced Electrical Conductivity: The electrical resistivity of the ITO films decreased significantly as the deposition temperature increased, from 6.05 × 10^-4 Ω·cm at 25°C to 3.27 × 10^-4 Ω·cm at 275°C. This improvement is linked to better film crystallinity and higher carrier concentration at elevated temperatures.
High Optical Transparency: Concurrently, the optical transmittance in the visible spectrum improved, rising from 78% to over 80% at the highest temperature. This demonstrates that the process enhances conductivity without compromising transparency.

Low-Temperature Liquid Metal Printing of Flexible, Ultra-Transparent Two-Dimensional Indium Tin Oxide

Datta, Robi S., et al. Nature Electronics 3.1 (2020): 51-58.

A low-temperature liquid-metal printing technique produces ultrathin, flexible two-dimensional ITO sheets (~1.5 nm) with exceptional visible transparency (<0.4% absorption, >99.3% transmittance for bilayers) and demonstrable flexibility, enabling printed capacitive touch screens without vacuum processing.
Approach & Process: Researchers exploited Cabrera-Mott surface oxidation of a low-melting indium-tin alloy to grow self-limiting 2D oxide layers on the liquid metal surface, then transferred monolayer or bilayer ITO onto glass, quartz or polymer substrates via van-der-Waals adhesion. Alloy composition was optimized (reported Sn4+ ≈ 7.4 at%) to produce highly crystalline, conductive 2D ITO. The method is ambient, low temperature, and compatible with repeated printing to build multiple sheets or larger areas.
Key Results: Centimetre-scale monolayer sheets were printed and used to fabricate a capacitive touch demonstrator. Bilayer samples achieved sheet resistance down to 5.4 kΩ/□ with >99.3% visible transmittance and absorbed <0.4% across the visible spectrum. The ~1.5 nm thickness yields exceptional mechanical flexibility with minimal conductivity loss after 1,000 bending cycles at 2 mm radius. Repeated prints form stratified bilayers with a measurable van-der-Waals gap between layers.
This vacuum-free, low-temperature printing route addresses ITO brittleness and high capital cost of sputtering, offering a pathway to roll-to-roll fabrication of ultra-transparent, flexible electrodes. Use cases include energy-sensitive touch displays, transparent conductors with minimal optical loss, and hybrid structures (2D ITO + metal-nanowire networks) where combined transparency and low sheet resistance are required.

Custom Q&A

What is the molecular formula of indium tin oxide?

The molecular formula of indium tin oxide is In18O28Sn.

What is the molecular weight of indium tin oxide?

The molecular weight of indium tin oxide is 2633.4 g/mol.

What are the component compounds of indium tin oxide?

The component compounds of indium tin oxide include indium oxide nanopowder (CID 5150906) and tin(II) oxide (CID 88989).

When was indium tin oxide created?

Indium tin oxide was created on July 12, 2007.

When was indium tin oxide last modified?

Indium tin oxide was last modified on October 21, 2023.

What is the IUPAC Name of indium tin oxide?

The IUPAC Name of indium tin oxide is oxo(oxoindiganyloxy)indigane;oxotin.

What is the InChI of indium tin oxide?

The InChI of indium tin oxide is InChI=1S/18In.28O.Sn.

What is the InChIKey of indium tin oxide?

The InChIKey of indium tin oxide is LOVUWYOAIPRZOC-UHFFFAOYSA-N.

What are the synonyms of indium tin oxide?

The synonyms of indium tin oxide include indium-tin-oxide.

What is the topological polar surface area of indium tin oxide?

The topological polar surface area of indium tin oxide is 407Ų.