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Home > Products > Material & Chemicals > Micro/NanoElectronics > Tris(diethylamido)(tert-butylimido)tantalum(V)

Catalog Number
ACM169896417
Product Name
Tris(diethylamido)(tert-butylimido)tantalum(V)
Structure
CAS
169896-41-7
IUPAC Name
tert-butyliminotantalum;diethylazanide;
Molecular Formula
C16H39N4Ta-3;
Molecular Weight
468.464g/mol
Rotatable Bond Count
7
Exact Mass
468.265g/mol
Monoisotopic Mass
468.265g/mol
Topological Polar Surface Area
15.4A^2
Heavy Atom Count
21
Formal Charge
-3
Complexity
139
Covalently-Bonded Unit
4
SMILES
CC[N-]CC.CC[N-]CC.CC[N-]CC.CC(C)(C)N=[Ta];
InChI
InChI=1S/C4H9N.3C4H10N.Ta/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;;
InChI Key
OAUVVCYTHMBYBP-UHFFFAOYSA-N;
H-Bond Acceptor
4
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1 Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma.

Park SG1, Woo HG, Sunwoo C, Kim DH.

J Nanosci Nanotechnol. 2013 Jun;13(6):4097-100.

Ta(Si)N films were prepared by atomic layer deposition (ALD) from tert-butylimido-tris-diethylamido tantalum (TBTDET), triethylsilane, and activated hydrogen. Triethylsilane was used as an ancillary reducing agent and as a silicon precursor. The effects of the addition of the triethylsilane at different hydrogen plasma pulse times and power on the electrical properties, particularly stability in ai ... Read More

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Tel:1-201-478-8534
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Fax: 1-516-927-0118
Address: 2200 Smithtown Avenue, Room 1 Ronkonkoma, NY 11779-7329 USA