Shih HY1, Chu FC2, Das A2, Lee CY2, Chen MJ1, Lin RM3.
Nanoscale Res Lett. 2016 Dec;11(1):235. doi: 10.1186/s11671-016-1448-z. Epub 2016 Apr 30.In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and s ... Read More