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Home > Products > Material & Chemicals > Micro/NanoElectronics > Tetrakis(ethylmethylamido)hafnium(IV)

Catalog Number
ACM352535014
Product Name
Tetrakis(ethylmethylamido)hafnium(IV)
Structure
CAS
352535-01-4
IUPAC Name
ethyl(methyl)azanide;hafnium(4+);
Molecular Formula
C12H32HfN4;
Molecular Weight
410.906g/mol
Rotatable Bond Count
4
Exact Mass
412.209g/mol
Monoisotopic Mass
412.209g/mol
Topological Polar Surface Area
4A^2
Heavy Atom Count
17
Complexity
50.5
Covalently-Bonded Unit
5
SMILES
CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.[Hf+4];
InChI
InChI=1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4;
InChI Key
NPEOKFBCHNGLJD-UHFFFAOYSA-N;
H-Bond Acceptor
4
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1 Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.

León-Plata PA1, Coan MR, Seminario JM.

J Mol Model. 2013 Oct;19(10):4419-32. doi: 10.1007/s00894-013-1956-z. Epub 2013 Aug 7.

We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited. The GaN clusters are suitable as testbeds for the actual Ga-face on practical GaN nanocrystals of importance not only in electronic ... Read More

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Tel:1-201-478-8534
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