Thin Films Preparation Service—AJA ATC-1800 F Sputtering

3x RF generators and automated matching boxes, up to 600 W
1x DC generator, up to 750 W
3x magnetron sources for 3” targets, with adjustable tilting angle
1x magnetron source for 2” targets, with adjustable tilting angle
RF substrate biasing up to 50 W, for surface cleaning/modification (before deposition) or tuning of deposited film properties (during deposition)
Load-lock chamber for fast and low-contamination substrate loading/unloading (only for substrates up to 4”)
Controllable substrate rotation for improved uniformity
Substrate temperature up to 350 ℃ (6” substrates) or 850 ℃ (4” substrates)
4 gas lines with mass flow controllers (Ar, O2, N2 and H2)
Phase-II J computer control for semi-automated processes (all processes except substrate loading/unloading and substrate rotation can be saved as recipes and run automatically)