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Nanofabrication Service—Reactive Ion Etch System (RIE)

Nanofabrication is the high point of global competition in manufacturing technology, aiming to provide specific functions for products and devices through nano-precision manufacturing, nano-scale manufacturing, and cross-scale manufacturing. The development of nanofabrication technology has enabled the movement of manufacturing objects from the macroscopic to the mesoscopic and microscopic, resulting in a deeper study of manufacturing science and an expansion of the intersection and integration of different disciplines. Alfa Chemistry provides nanofabrication services to our customers based on Reactive Ion Etch System (RIE).

Name Of The Instrument/Platform

Reactive Ion Etch System (RIE)

Summary

STS Reactive Ion Etcher (RIE) dielectric System is designed for isotropic RIE plasma etching of dielectric films. The system is capable deep etching of oxide with high selectivity to resist and silicon and fast etch rates. The RIE plasma etching process is accomplished through the use of a low pressure; 13.56 megahertz radio frequency (RF) induced gaseous discharge. The system is set to handle four different gases (CF4, CHF3, O2, and He) for etching of Silicon Nitride or Silicon Dioxide at various etch rates. The sample is backside cooled during etch processes.

Alfa Chemistry is dedicated to the development of new manufacturing theories, methods, and processes that enable deeper research in manufacturing science. Our Reactive Ion Etch System (RIE)-based nanofabrication services will provide you with the most solid support for your materials research. If you are interested, please feel free to contact us.

For research use only, not intended for any clinical use.

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