Etching Service—SPTS Rapier Si DRIE

1. Patented dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals.
1) High etch rate
2) Excellent uniformity
3) Controls tilting of deep features across the wafer
2. Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware.
Delivering unparalleled process capability with world-class productivity & cost of ownership benefits, SPTS' DRIE process modules are used in a wide variety of applications across multiple end markets.