Won SJ1, Kim JR, Suh S, Lee NI, Hwang CS, Kim HJ.
ACS Appl Mater Interfaces. 2011 May;3(5):1633-9. doi: 10.1021/am200176j. Epub 2011 May 3.Rapid atomic layer deposition (RALD) of SiO₂ thin films was achieved using trimethyl-aluminum and tris(tert-pentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ∼28 nm/cycle was obtained by optimizing the catalyst layer density, whereas the previous reports showed lower values of 12 to 17 nm/cycle [Hausmann et al. Science2002, 298, 402-406; Burton et al. Read More