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Home > Product > Material & Chemicals > Micro/NanoElectronics > Tetrakis(ethylmethylamino)hafnium

Tetrakis(ethylmethylamino)hafnium | CAS Number: 352535-01-4

Catalog Number
ACM352535014
Product Name
Tetrakis(ethylmethylamino)hafnium
Structure
CAS Number
352535-01-4
Synonyms
TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM;HAFNIUM TETRAKIS(ETHYLMETHYLAMIDE);Tetrakis(ethylmethylamido)hafnium(IV), 99.99+%;temah;tetrakis(ethylmethylamido)hafnium(iv);N-Methylethanamine, hafnium(4+) salt;Tetrakis(ethylmethylamino)hafnium(IV), 99%;TEMAH,Tetrakis(
Molecular Weight
410.9
Molecular Formula
C12H32HfN4
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1Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.

León-Plata PA1, Coan MR, Seminario JM.

J Mol Model. 2013 Oct;19(10):4419-32. doi: 10.1007/s00894-013-1956-z. Epub 2013 Aug 7.

We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited. The GaN clusters are suitable as testbeds for the actual Ga-face on practical GaN nanocrystals of importance not only in electronics but for several other applications in nanotechnology. Read More

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