Jin C1, Liu B1, Lei Z2, Sun J1.
Nanoscale Res Lett. 2015 Feb 28;10:95. doi: 10.1186/s11671-015-0790-x. eCollection 2015.TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Read More