Park SG1, Woo HG, Sunwoo C, Kim DH.
J Nanosci Nanotechnol. 2013 Jun;13(6):4097-100.Ta(Si)N films were prepared by atomic layer deposition (ALD) from tert-butylimido-tris-diethylamido tantalum (TBTDET), triethylsilane, and activated hydrogen. Triethylsilane was used as an ancillary reducing agent and as a silicon precursor. The effects of the addition of the triethylsilane at different hydrogen plasma pulse times and power on the electrical properties, particularly stability in air, were investigated. Read More