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Home > Product > Material & Chemicals > Micro/NanoElectronics > Tantalum tris(diethylamido)-tert-butylimide

Tantalum tris(diethylamido)-tert-butylimide | CAS Number: 169896-41-7

Catalog Number
ACM169896417
Product Name
Tantalum tris(diethylamido)-tert-butylimide
Structure
CAS Number
169896-41-7
IUPAC Name
tert-butyliminotantalum;diethylazanide
Synonyms
(TERT-BUTYLIMINO)TRIS(DIETHYLAMINO)TANTALUM;TANTALUM TRIS(DIETHYLAMIDO)-TERT-BUTYLIMIDE;TRIS(DIETHYLAMIDO)(TERT-BUTYLIMIDO)TANTALUM(V);TRIS(DIETHYLAMINO)(T-BUTYLIMINO)TANTALUM;TRIS(DIETHYLAMINO)-TERT-BUTYLAMIDO TANTALUM;TRIS(DIETHYLAMINO)(TERT-BUTYLIMINO)
Molecular Weight
468.46
Exact Mass
468.26500
Molecular Formula
C16H39N4Ta
Boiling Point
90ºC/0.1mm
Density
1.252 g/mL at 25ºC(lit.)
Purity
96%
SMILES
CC[N-]CC.CC[N-]CC.CC[N-]CC.CC(C)(C)N=[Ta]
InChIKey
OAUVVCYTHMBYBP-UHFFFAOYSA-N
H-Bond Donor
0
H-Bond Acceptor
4
Safty Description
S26
Hazard Statements
C
Packing Group
II
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1Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma.

Park SG1, Woo HG, Sunwoo C, Kim DH.

J Nanosci Nanotechnol. 2013 Jun;13(6):4097-100.

Ta(Si)N films were prepared by atomic layer deposition (ALD) from tert-butylimido-tris-diethylamido tantalum (TBTDET), triethylsilane, and activated hydrogen. Triethylsilane was used as an ancillary reducing agent and as a silicon precursor. The effects of the addition of the triethylsilane at different hydrogen plasma pulse times and power on the electrical properties, particularly stability in air, were investigated. Read More

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Tel:1-201-478-8534
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Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA