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Home > Product > Material & Chemicals > Biomaterials > N-Tetradecylphosphonic acid

N-Tetradecylphosphonic acid | CAS Number: 4671-75-4

Catalog Number
ACM4671754
Product Name
N-Tetradecylphosphonic acid
Structure
CAS Number
4671-75-4
EC Number
225-118-1
IUPAC Name
tetradecylphosphonic acid
Synonyms
TDPA;TETRADECYL PHOSPHONATE;TETRADECYLPHOSPHONIC ACID;N-TETRADECYLPHOSPHONIC ACID;1-TETRADECANEPHOSPHONIC ACID;tetradecanephosphonicacid;tetradecyl-phosphonicaci;n-Tetradecylphosphonicacid,98%
Molecular Weight
278.37
Exact Mass
278.20100
Molecular Formula
C14H31O3P
Boiling Point
411.2ºC at 760 mmHg
Melting Point
96-98ºC
Flash Point
202.5ºC
Density
0.998 g/cm3
Purity
98 %
Appearance
white to off-white powder
SMILES
CCCCCCCCCCCCCCP(=O)(O)O
InChIKey
BVQJQTMSTANITJ-UHFFFAOYSA-N
H-Bond Donor
2
H-Bond Acceptor
3
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1Fermi level pinning by gap states in organic semiconductors.

Yogev S1, Matsubara R, Nakamura M, Zschieschang U, Klauk H, Rosenwaks Y.

Phys Rev Lett. 2013 Jan 18;110(3):036803. Epub 2013 Jan 18.

We measure the gap density of states and the Fermi level position in thin-film transistors based on pentacene and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) films grown on various surfaces using Kelvin probe force microscopy. It is found that the density of states in the gap of pentacene is extremely sensitive to the underlying interface and governs the Fermi level energy in the gap. The density of gap states in pentacene films grown on bare silicon dioxide (SiO(2)) was found to be larger by 1 order of magnitude compared to that in pentacene grown on SiO(2) treated with hexamethyldisilazane and larger by 2 orders of magnitude compared to that of pentacene grown on aluminum oxide (AlO(x)) treated with a self-assembled monolayer (SAM) of n-tetradecylphosphonic acid (HC(14)-PA). Read More

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Tel:1-201-478-8534
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Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA