Shimizu T1, Zhang Z, Shingubara S, Senz S, Gösele U.
Nano Lett. 2009 Apr;9(4):1523-6. doi: 10.1021/nl8035756.Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. Read More