Plassmeyer PN1, Archila K, Wager JF, Page CJ.
ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1678-84. doi: 10.1021/am507271e. Epub 2015 Jan 12.Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Read More