CONTACT US

Email: info@alfa-chemistry.com
Tel:1-201-478-8534
1-516-662-5404
Fax: 1-516-927-0118
Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA

For product inquiries, please use our online system or send an email to
inquiry@alfa-chemistry.com

chemistry partner

Indium nitride | CAS Number: 25617-98-5

Catalog Number
ACM25617985
Product Name
Indium nitride
Structure
CAS Number
25617-98-5
Synonyms
indiumnitride(inn);INDIUM NITRIDE;INDIUM(III) NITRIDE;INDIUM(III)NITRIDE, 99.9%;Indium nitride, 99.8% (metals basis);Nitriloindium(III);Indium mononitride;IndiuM nitride (III)
Molecular Weight
128.82
Molecular Formula
InN
If you have any other questions or need other size, please get a quote.
  • CAS
  • Size
  • Purity
  • Price
  • Availability
  • Quantity
  • Order
1Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique.

Chen HJ1, Yang DL1, Huang TW1, Yu IS2.

Nanoscale Res Lett. 2016 Dec;11(1):241. doi: 10.1186/s11671-016-1455-0. Epub 2016 May 4.

In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(-2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. Read More

Share

Interested in our Services & Products ? Need detailed information?
facebook twitter linkedin google+

Contact us

Email:
Tel:1-201-478-8534
1-516-662-5404
Fax: 1-516-927-0118
Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA