Chen HJ1, Yang DL1, Huang TW1, Yu IS2.
Nanoscale Res Lett. 2016 Dec;11(1):241. doi: 10.1186/s11671-016-1455-0. Epub 2016 May 4.In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(-2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. Read More