Kim J, Jang K, Phu NT, Trinh TT, Raja J, Kim T, Cho J, Kim S, Park J, Jung J, Lee YJ, Yi J.
J Nanosci Nanotechnol. 2016 May;16(5):4984-8.Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. Read More