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GERMANIUM NITRIDE | CAS Number: 12065-36-0

Catalog Number
ACM12065360
Product Name
GERMANIUM NITRIDE
Structure
CAS Number
12065-36-0
Synonyms
GERMANIUM NITRIDE;GERMANIUM TETRANITRIDE;trigermanium tetranitride;GERMANIUM NITRIDE, 99.99+%;germanium(iii) nitride;Germanium(III) nitride >=99.99% trace metals basis
Molecular Weight
273.95
Molecular Formula
Ge3N4
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1Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

Kim J, Jang K, Phu NT, Trinh TT, Raja J, Kim T, Cho J, Kim S, Park J, Jung J, Lee YJ, Yi J.

J Nanosci Nanotechnol. 2016 May;16(5):4984-8.

Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. Read More

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Contact us

Email:
Tel:1-201-478-8534
1-516-662-5404
Fax: 1-516-927-0118
Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA