Zydor A1, Elliott SD.
J Phys Chem A. 2010 Feb 4;114(4):1879-86. doi: 10.1021/jp9072608.Thin film dielectrics based on hafnium and zirconium oxides are being introduced to increase the permittivity of insulating layers in nanoelectronic transistor and memory devices. Atomic layer deposition (ALD) is the process of choice for fabricating these films, and the success of this method depends crucially on the chemical properties of the precursor molecules. Designing new precursors requires molecular engineering and chemical tailoring to obtain specific physical properties and performance capabilities. Read More