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Home > Product > Material & Chemicals > Micro/NanoElectronics > Bis(cyclopentadienyl)dimethylhafnium

Bis(cyclopentadienyl)dimethylhafnium | CAS Number: 37260-88-1

Catalog Number
ACM37260881
Product Name
Bis(cyclopentadienyl)dimethylhafnium
Structure
CAS Number
37260-88-1
IUPAC Name
carbanide;cyclopenta-1,3-diene;hafnium(4+)
Synonyms
BIS(CYCLOPENTADIENYL)DIMETHYLHAFNIUM;BIS(CYCLOPENTADIENYL)DIMETHYLHAFNIUM(IV);BIS(CYCLOPENTADIENYL)HAFNIUM DIMETHYL;HAFNOCENE DIMETHYL;Bis(cyclopentadienyl)dimethylhafnium,min.97%;Bis(cyclopentadienyl)dimethylhafnium(IV), 97+%;Bis(cyclopentadienyl)dimethy
Molecular Weight
338.75
Exact Mass
340.07200
Molecular Formula
C12H16Hf 10*
Melting Point
118ÂșC
Purity
96%
InChIKey
CMPSFTFHQOLFAJ-UHFFFAOYSA-N
H-Bond Donor
0
H-Bond Acceptor
4
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1Thermal stability of precursors for atomic layer deposition of TiO2, ZrO2, and HfO2: an ab initio study of alpha-hydrogen abstraction in bis-cyclopentadienyl dimethyl complexes.

Zydor A1, Elliott SD.

J Phys Chem A. 2010 Feb 4;114(4):1879-86. doi: 10.1021/jp9072608.

Thin film dielectrics based on hafnium and zirconium oxides are being introduced to increase the permittivity of insulating layers in nanoelectronic transistor and memory devices. Atomic layer deposition (ALD) is the process of choice for fabricating these films, and the success of this method depends crucially on the chemical properties of the precursor molecules. Designing new precursors requires molecular engineering and chemical tailoring to obtain specific physical properties and performance capabilities. Read More

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Tel:1-201-478-8534
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Address: Suite 212, Waverly Plaza, 755 Waverly Avenue, Holtsville, NY 11742, USA